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2SK2425
Silicon N Channel MOS FET
REJ03G1012-0200 (Previous: ADE-208-1360) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter.
Outline
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C*FM)
D G 1. Gate 2. Drain 3. Source
12
3
S
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK2425
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 250 30 7 28 7 30 150 -55 to +150 Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 30 -- -- 2.0 -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.4 5.0 690 265 45 13 55 65 37 1.0 180 Max -- -- 10 250 3.0 0.55 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS =250 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*3 ID = 4 A, VDS = 10 V*3 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5
IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK2425
Main Characteristics
Power vs. Temperature Derating
30
100
Operation in this area is limited by RDS(on)
10 0
Maximum Safe Operation Area
Pch (W)
ID (A)
30 10 3 1 0.3
10
s
s
Channel Dissipation
20
1
D C
PW
Drain Current
m
s
O
=
pe
ra
10
10
tio
m
s
n
(T
(1
c
sh
=
25
ot
)
Ta = 25C 1 3 10 30
C
)
0
0.1
50
100
150
100 300
1000
Case Temperature
Tc (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
10 10 V 5.5 V Pulse Test 5V 6 6V 10
Typical Transfer Characteristics
Drain Current ID (A)
Drain Current ID (A)
8
8 6
VDS = 10 V Pulse Test
4
4.5 V
4 Tc = 75C 2 25C - 25C
2
VGS = 4 V
0 1 4 8 12 16 20 0 2 4 6 8 10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
10 Pulse Test 8
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 Pulse Test VGS = 10 V
Drain to Source Saturation Voltage VDS(on) (V)
Static Drain to Source On State Resistance RDS (on) ()
2 1 0.5
6 ID = 10 A 4 5A 2A 0 4 8 12 16 20
15 V 0.2 0.1 0.05 0.2 0.5 1 2 5 10 20
2
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK2425
Static Drain to Source on State Resistance vs. Temperature
2.0 Pulse Test VGS = 10 V ID = 10 A 5A 0.8 2A
Static Drain to Source On State Resistance RDS(on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance |yfs| (S)
50 Pulse Test VDS = 10 V
1.6
20 10 5 2 1 0.5 0.1
-25C 25C Tc = 75C
1.2
0.4
0 - 40
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature Tc (C)
Drain Current ID (A) Typical Capacitance vs. Drain Source Voltage
1000 Ciss
Body to Drain Diode Reverse Recovery Time
500
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50 di / dt = 100 A / s VGS = 0, Ta = 25C
Coss 100
20 10 5 0.2
10 VGS = 0 f = 1 MHz 1
Crss
0.5
1
2
5
10
20
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
500 20 500
Switching Characteristics
Gate to Source Voltage VGS (V)
VGS = 10 V, VDD =* 30 V PW = 2 s, duty 1 % td (off)
*
Drain to Source Voltage VDS (V)
VGS 300 VDS 200 V 100 V VDD = 50 V VDD = 200 V 100 V 50 V 0 8 16 24 32 40 8 12
Switching Time t (ns)
400
ID = 7 A
16
200 100 50
200
tf 20 10 5 0.1 tr td (on)
100
4 0
0.2
0.5
1
2
5
10
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK2425
Reverse Drain Current vs. Source to Drain Voltage
10
Reverse Drain Current IDR (A)
8
Pulse Test
6 4 VGS = 10 V 2 VGS = 0, - 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
0.05
ch - c(t) = s (t) * ch - c ch - c = 4.17C/W, Tc = 25C
PDM
D=
PW T
0.03
0.02 1 0.0
PW T
0.01 10
1s
t ho
pu
lse
100
1m
10 m
100 m
1
10
Pulse Width Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T RL Vin 10 V 50 . . VDD = 30 V
PW (S) Waveforms
90 % Vin V out 10 % 10 % 90 % td(on) tr 90 % td(off) 10 %
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK2425
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0003AE-A
Package Name TO-220CFM / TO-220CFMV
MASS[Typ.] 1.9g
Unit: mm
10.0 0.3
3.2 0.2
4.5 0.3 2.7 0.2
4.1 0.3
0.6 0.1
2.5 0.2
2.54
2.54
0.7 0.1
Ordering Information
Part Name 2SK2425-E Quantity 600 pcs Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
13.6 1.0
1.0 0.2 1.15 0.2
12.0 0.3
15.0 0.3
Sales Strategic Planning Div.
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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